ELECTRON BEAM LITHOGRAPHY SYSTEM, METHOD THEREOF, DEVICE MANUFACTURING METHOD, AND MASK

摘要

PROBLEM TO BE SOLVED: To perform exposure quickly easily and appropriately. SOLUTION: An electron beam lithography system which lithographs a pattern on a wafer 64 by means of an electron beam includes: a wafer stage 62 on which the wafer 64 is placed; a mask stage 72 on which a mask 30 is placed having a pattern region 30B where a pattern for patterning the wafer 64 is formed, and a passing region 30A which is near the pattern 30B and where the electron beam passes; an electron gun 12 for generating the electron beam; and a deflection control part 82 and an electron lens controlling part 88 which irradiate the pattern region 30B and the passing region 30A of the mask 30 with the electron beam generated by the electron gun 12.