IMPROVED PROGRAMMING METHOD FOR MEMORY CELL

摘要

PROBLEM TO BE SOLVED: To provide an operation method for making the array of memory cells compact and compressing a memory cell densely. SOLUTION: This method is a method for operating memories including memory cells of the first and the second groups. The first group cells formed in a first semiconductor region are connected effectively to word lines and individual bit line, and the second group cells formed in a second semiconductor region are connected effectively to word lines and individual bit liens. This method includes a process applying first voltage to the word lines, a process applying second voltage to the first semiconductor region, a process applying selected voltage the bit lines of the first group cells, a process applying fourth voltage to the second semiconductor region, and a process applying fifth voltage to the bit lines of the second group cells.