发明名称 LIQUID PROCESSING METHOD
摘要 PROBLEM TO BE SOLVED: To provide a method for processing the surface of a substrate uniformly with liquid by preventing voltage drop in the central part of the substrate. SOLUTION: A seed layer 80 having a thicker central part 79 as compared with the outer circumferential fringe part 78 is formed on the surface of a wafer W to be plated by means of a PVD system. A plated layer is formed on the surface of the wafer W on which the seed layer 80 is formed.
申请公布号 JP2001319895(A) 申请公布日期 2001.11.16
申请号 JP20000174443 申请日期 2000.05.08
申请人 TOKYO ELECTRON LTD 发明人 KATO YOSHINORI
分类号 C25D7/12;H01L21/288;(IPC1-7):H01L21/288 主分类号 C25D7/12
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