发明名称 ELECTROLYTIC PLATING
摘要 PROBLEM TO BE SOLVED: To solve such a problem that the plating layer of each semiconductor wafer has fluctuation in the thickness and hence, it is unstable because a specified motion of a holding body 2 is set and the semiconductor wafer W is subjected to a plating treatment while repeating a specified motion and the liquid level of the plating liquid successively consumed is not controlled. SOLUTION: In the electrolytic plating device 10, when a semiconductor wafer W is subjected to a copper plating by electrically connecting an anode 16 and a cathode 17 through the plating liquid 11 under the control of a controller 29, the holding body 18 is provided with a liquid level sensor 28 and the controller 29 optimizes the eletrolytic plating condition in every semiconductor wafer W on the basis of a signal from the liquid level sensor 28.
申请公布号 JP2001316892(A) 申请公布日期 2001.11.16
申请号 JP20000135244 申请日期 2000.05.08
申请人 TOKYO ELECTRON LTD 发明人 OKASE WATARU;YAGI YASUSHI
分类号 C25D7/12;C25D17/00;C25D17/06;C25D21/12;H01L21/288;H05K3/18;(IPC1-7):C25D21/12 主分类号 C25D7/12
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