发明名称 |
THIN FILM DEPOSITION METHOD |
摘要 |
PROBLEM TO BE SOLVED: To prevent the dislocation of a mask and the falling of a substrate in a single-substrate sputtering system, and to carry out the film deposition of a thin film having a sharp edge with masking by magnetron sputtering. SOLUTION: A magnet is provided to the rear of a substrate. In the region shielded with a mask on the substrate, the magnetic flux density by the magnet on the rear of the substrate is set so that it is higher by >=0.02 T than the magnetic flux density by a cathode magnet.
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申请公布号 |
JP2001316799(A) |
申请公布日期 |
2001.11.16 |
申请号 |
JP20000138347 |
申请日期 |
2000.05.11 |
申请人 |
CANON INC |
发明人 |
NISHIDA TAKETO;OKADA TAKESHI |
分类号 |
G02F1/1343;C23C14/04;C23C14/08;C23C14/35;H01L21/203;H01L21/28;H01L21/285;(IPC1-7):C23C14/04;G02F1/134 |
主分类号 |
G02F1/1343 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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