发明名称 THIN FILM DEPOSITION METHOD
摘要 PROBLEM TO BE SOLVED: To prevent the dislocation of a mask and the falling of a substrate in a single-substrate sputtering system, and to carry out the film deposition of a thin film having a sharp edge with masking by magnetron sputtering. SOLUTION: A magnet is provided to the rear of a substrate. In the region shielded with a mask on the substrate, the magnetic flux density by the magnet on the rear of the substrate is set so that it is higher by >=0.02 T than the magnetic flux density by a cathode magnet.
申请公布号 JP2001316799(A) 申请公布日期 2001.11.16
申请号 JP20000138347 申请日期 2000.05.11
申请人 CANON INC 发明人 NISHIDA TAKETO;OKADA TAKESHI
分类号 G02F1/1343;C23C14/04;C23C14/08;C23C14/35;H01L21/203;H01L21/28;H01L21/285;(IPC1-7):C23C14/04;G02F1/134 主分类号 G02F1/1343
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