| 摘要 |
PROBLEM TO BE SOLVED: To easily and accurately manufacture a semiconductor device with three-dimensional structure. SOLUTION: A semiconductor device 1 is equipped with a wiring pattern 11 that is formed on a substrate 10, an insulating film 20 that is formed to cover the wiring pattern 11, a first element chip 2 that is placed on the insulating film 20, and a conductor pillar 4 that passes through the insulating film 20 and allows the wiring pattern 11 to be electrically continuous to the first element chip 2. |
