发明名称 In2O3-SnO2 PRECURSOR APPLICATION LIQUID AND ITS PREPARATION AS WELL AS PROCUDING METHOD OF In2O3-SnO2 THIN FILM
摘要 PROBLEM TO BE SOLVED: To provide a method of preparing an application liquid, allowing the preparation of the application liquid having superior stability, high purity and improved film forming performance for facilitating the increase of a film thickness and the formation of a high-grade ITO thin film, when forming the ITO thin film on the surface of a substrate using a sol-gel method. SOLUTION: Indium nitrate and tin alkoxide as starting as starting materials are dissolved and reacted using one or two types or more of solvent selected from the groups consisting of ethylene glycol, ethylene glycol monoalkylether, propylene glycol and propylene glycol monoalkyleter, and then an organic high polymer is added to an obtained solution.
申请公布号 JP2001319530(A) 申请公布日期 2001.11.16
申请号 JP20000133559 申请日期 2000.05.02
申请人 KANSAI RESEARCH INSTITUTE;FUJI KAGAKU KK;ROHM CO LTD 发明人 FUKUI TOSHIMI;CHO SHOCHIKU;UCHIDA FUMIO;TAKAMURA MAKOTO
分类号 G01C19/00;C01G19/00;H01B13/00;(IPC1-7):H01B13/00 主分类号 G01C19/00
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