发明名称 HIGH-FREQUENCY SEMICONDUCTOR DEVICE AND FORMING METHOD OF SEMICONDUCTOR MODULE
摘要 PROBLEM TO BE SOLVED: To provide a high-frequency semiconductor device which is not required to be previously provided with electrodes, manufactured at a low cost, suitable for mass production, selectable over a wide range of permittivity, not required to melt the solder of a mounted part when it is replaced, can be continuously regulated in the amount of resin to add, monitoring high-frequency characteristics such as electrostatic capacity and a semiconductor module forming method. SOLUTION: This high-frequency semiconductor device 10 is equipped with a semiconductor chip, a capacitor, and a film circuit board 11. A capacitor mounting structure of resin is formed as a part of a circuit element between wiring patterns on the film circuit board 11.
申请公布号 JP2001319824(A) 申请公布日期 2001.11.16
申请号 JP20000137071 申请日期 2000.05.10
申请人 NEC CORP 发明人 WAKAO TADAKI
分类号 H01G2/06;H01L25/00;H05K7/06;(IPC1-7):H01G2/06 主分类号 H01G2/06
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