发明名称 SPUTTERING TARGET FOR FORMATION OF OPTICAL LOGGING PROTECTION FILM CAPABLE OF DC SPUTTERING
摘要 PROBLEM TO BE SOLVED: To provide a sputtering target for formation of an optical logging protection film which is made of zinc chalcogenide/silicon dioxide/indium oxide- based sintered compact and is capable of DC sputtering. SOLUTION: This sputtering target comprises 10-30 mol% silicon dioxide, 0.5-30 mol% indium oxide and the balance zinc chalcogenide.
申请公布号 JP2001316805(A) 申请公布日期 2001.11.16
申请号 JP20000134383 申请日期 2000.05.08
申请人 MITSUBISHI MATERIALS CORP 发明人 ODA JUNICHI;KYO JINKO
分类号 C04B35/547;C23C14/34;G11B7/26 主分类号 C04B35/547
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