| 摘要 |
PROBLEM TO BE SOLVED: To lengthen the data holding time by sharing a plate line for all memory cells, enabling to form it out of materials such as poly-silicon or the like, micronizing it easily, and preventing the occurrence of inversion of polarization of a ferroelectric capacity being a recording medium. SOLUTION: Write-in of data '0' for a memory cell 101 is performed, as shown in Fig. 2A, by turning on a transistor 11 and making a potential of a bit line BL -VCC, and polarizing a ferroelectric capacitor 12 in the upper direction in the Fig as shown by an arrow mark X. Write-in of data '1' is performed, as shown in Fig. 2B, by turning on the transistor 11, making a potential of the bit line BL VCC, and polarizing the ferroelectric capacitor 12 in the lower direction, as shown in the Fig.
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