| 发明名称 |
MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE |
| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor device that does not include boreholes in a plated layer. SOLUTION: Plating is made twice. More specifically, a first plated layer is formed on a substrate, and annealing is made for forming a second plated layer.
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| 申请公布号 |
JP2001319896(A) |
申请公布日期 |
2001.11.16 |
| 申请号 |
JP20000174438 |
申请日期 |
2000.05.08 |
| 申请人 |
TOKYO ELECTRON LTD |
发明人 |
BOKU YOSHIHIRO;TANAKA YOSHIJI;KATO YOSHINORI;SATO HIROSHI |
| 分类号 |
C25D7/12;C25D19/00;H01L21/28;H01L21/288;H01L21/304;H01L21/306;H01L21/3205;(IPC1-7):H01L21/288;H01L21/320 |
主分类号 |
C25D7/12 |
| 代理机构 |
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代理人 |
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