| 摘要 |
PROBLEM TO BE SOLVED: To provide a ferroelectric memory which can read out sufficiently residual polarization information. SOLUTION: In the ferroelectric memory provided with word lines WL in which memory cells MC consisting of ferroelectric capacitors and transistors are arranged and which selects a memory cell MC, plate lines PL for applying drive voltage to one end of the ferroelectric capacitor, a memory cell array i in which bit lines BL, /BL to which the other end of the ferroelectric capacitor is connected selectively are disposed, and a sense amplifier circuit 2 detecting and amplifying a signal reads out to the bit lines BL, /BL from the ferroelectric capacitor, further, the device is provided with a bit line voltage control circuit 3 performing control for reducing voltage of a bit line from which a signal is read out by a capacitor C for coupling before operation of the sense amplifier circuit 2 at the time of reading data. |
