发明名称 MEMORY DEVICE
摘要 PROBLEM TO BE SOLVED: To provide a memory device in which the power consumption required for pre-charge is less. SOLUTION: Before a processor 400 performs memory access, a bit line to be pre-charged is predicted by a bit line variation predicting circuit 120 based on variation of an address signal 10, pre-charge is performed for only a bit line predicted by an output signal 121 of the bit line variation predicting circuit, the power consumption is reduced without delaying access time to a memory by performing no pre-charge for the other bit lines.
申请公布号 JP2001319479(A) 申请公布日期 2001.11.16
申请号 JP20000139308 申请日期 2000.05.12
申请人 NEC CORP 发明人 KIMURA TOMOAYA
分类号 G11C11/41 主分类号 G11C11/41
代理机构 代理人
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