GaN BASED LIGHT EMITTING ELEMENT AND METHOD OF OF ITS MANUFACTURE

摘要

PROBLEM TO BE SOLVED: To provide a good quality GaN based light emitting element having an active layer of GaNP or GaNAs and its manufacturing method. SOLUTION: Phosphorus (P) ions are implanted into a p-type GaN layer 14 formed on an n-type GaN layer 13 which is then heated to form a GaNP layer 15 serving as an active layer.