| 摘要 |
PROBLEM TO BE SOLVED: To prevent exfoliation of an electrode in a gallium nitride based semiconductor element. SOLUTION: A gallium nitride based light emitting element is provided with an insulator mask which is formed on substrate crystal whose uppermost layer is a first semiconductor layer of a first conductivity type and has a stripe type aperture part, an active layer containing a semiconductor layer which is formed selectively in the stripe type aperture part of the mask and is shown by a general formula InpAlqGa1-p-qN (0<=p<=1, 0<=q<=1, 0<=p+q<=1), and a second semiconductor layer containing at least one semiconductor layer of a second conductivity type which is formed on the active layer and shown by a general formula InuAlvGa1-u-vN (0<=u<=1, 0<=v<=1, 0<=u+v<=1). Crystal structure of the first semiconductor layer is hexagonal system. Its surface is a (0001) face or a face having an angle of at most 10 degrees to the (0001) face. The stripe of the mask is formed in the [1-100] direction of the first semiconductor layer or in the direction having an angle of at most 10 degrees to the [1-100] direction.
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