| 摘要 |
PROBLEM TO BE SOLVED: To provide a method and a device for selecting a semiconductor laser which ensures a self-excited oscillation under the real working condition and enables avoiding to burden the laser too much at the inspection level. SOLUTION: The interferogram is obtained by interfering with a semiconductor under the predetermined condition to measure the half value width (70 in Figure 1) of the zero-order or higher-order peak curve (60, 61, 62 in Figure 1) the half value width, and the predetermined value are compared to estimate the self-oscillating state of the semiconductor laser under the real working condition. The method enables deciding the quality of the semiconductor laser under the condition where load is not increased on semiconductor laser.
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