发明名称 Semiconductor device and method of manufacturing same
摘要 The present invention provides a quality and reliable high-density package (Chip Size Package) semiconductor device without problems related to the manufacturing process. The semiconductor device includes the first semiconductor substrate piece having electrode pads formed on its principle surface, and a second semiconductor mounting piece mounted thereon via a first insulating film and a die-attaching material. On the surface opposite the first semiconductor substrate piece of the second semiconductor substrate piece, formed are wiring patterns and a second insulating film for protecting the wiring patterns. The wiring patterns include electrode pads, wires, and lands where external connection terminals are provided.
申请公布号 US2001040285(A1) 申请公布日期 2001.11.15
申请号 US20010847314 申请日期 2001.05.03
申请人 ISHIO TOSHIYA;NAKANISHI HIROYUKI;MORI KATSUNOBU 发明人 ISHIO TOSHIYA;NAKANISHI HIROYUKI;MORI KATSUNOBU
分类号 H01L23/12;H01L21/56;H01L21/60;H01L23/31;H01L23/52;H01L25/065;H01L25/07;H01L25/18;(IPC1-7):H01L23/48 主分类号 H01L23/12
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