发明名称 Apparatus for forming silicon oxide film and method of forming silicon oxide film
摘要 An apparatus for forming a silicon oxide film which has a process chamber and is for thermally oxidizing a surface of a silicon layer by introducing water vapor into the process chamber, and which further has dew-formation prevention/evaporation means for preventing dew formation in the process chamber and/or evaporating dew in the process chamber.
申请公布号 US2001041462(A1) 申请公布日期 2001.11.15
申请号 US20010867001 申请日期 2001.05.29
申请人 KASHIWAGI AKIHIDE;KATAOKA TOYOTAKA;SUZUKI TOSHIHIKO 发明人 KASHIWAGI AKIHIDE;KATAOKA TOYOTAKA;SUZUKI TOSHIHIKO
分类号 H01L21/31;C23C8/02;C23C8/16;C30B33/00;H01L21/316;(IPC1-7):H01L21/469 主分类号 H01L21/31
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