发明名称 |
Apparatus for forming silicon oxide film and method of forming silicon oxide film |
摘要 |
An apparatus for forming a silicon oxide film which has a process chamber and is for thermally oxidizing a surface of a silicon layer by introducing water vapor into the process chamber, and which further has dew-formation prevention/evaporation means for preventing dew formation in the process chamber and/or evaporating dew in the process chamber.
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申请公布号 |
US2001041462(A1) |
申请公布日期 |
2001.11.15 |
申请号 |
US20010867001 |
申请日期 |
2001.05.29 |
申请人 |
KASHIWAGI AKIHIDE;KATAOKA TOYOTAKA;SUZUKI TOSHIHIKO |
发明人 |
KASHIWAGI AKIHIDE;KATAOKA TOYOTAKA;SUZUKI TOSHIHIKO |
分类号 |
H01L21/31;C23C8/02;C23C8/16;C30B33/00;H01L21/316;(IPC1-7):H01L21/469 |
主分类号 |
H01L21/31 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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