发明名称 |
TRENCH ISOLATOIN REGIONS HAVING TRENCH LINERS WITH RECESSED ENDS |
摘要 |
A trench isolation structure which prevents a hump phenomenon and an inverse narrow width effect of transistors by rounding the top edges of a trench and increasing the amount of oxidation at the top edges of a trench, a semiconductor device having the trench isolation structure, and a trench isolation method are provided. In this trench isolation method, a trench is formed in non-active regions of a semiconductor substrate. An inner wall oxide film having a thickness of 10 to 150Å is formed on the inner wall of the trench. A liner is formed on the surface of the inner wall oxide film. The trench is filled with a dielectric film. Part of the liner is etched so that the top ends of the silicon nitride liner are recessed from the surface of the semiconductor substrate.
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申请公布号 |
US2001041421(A1) |
申请公布日期 |
2001.11.15 |
申请号 |
US20010911096 |
申请日期 |
2001.07.23 |
申请人 |
PARK TAI-SU;PARK MOON-HAN;PARK KYUNG-WON;LEE HAN-SIN |
发明人 |
PARK TAI-SU;PARK MOON-HAN;PARK KYUNG-WON;LEE HAN-SIN |
分类号 |
H01L21/76;H01L21/316;H01L21/762;H01L29/78;(IPC1-7):H01L21/76 |
主分类号 |
H01L21/76 |
代理机构 |
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地址 |
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