发明名称 Semiconductor device
摘要 Two adjacent lines are formed in parallel to a signal line in a wiring layer where the signal line is formed. Intersection lines are formed respectively in wiring layers above and under the wiring layers where the signal line and the adjacent lines are formed, along areas which are enclosed by the adjacent lines. Entire-line-area through-holes for connecting each of the adjacent lines with a corresponding one of the intersection line are formed along the entire area of the adjacent lines, in an insulating layer between the adjacent lines and the intersection lines. The signal line is completely covered by the adjacent lines, the intersection lines and the entire-line-area through-holes. The adjacent lines, the intersection lines and the entire-line-area through-holes are maintained at a constant potential, or their electric potentials have the same phase as that of the signal line.
申请公布号 US2001040274(A1) 申请公布日期 2001.11.15
申请号 US20000525802 申请日期 2000.03.15
申请人 发明人 HIDAKA ITSUO
分类号 H01L23/52;H01L21/3205;H01L23/552;H01L23/58;(IPC1-7):H01L23/552 主分类号 H01L23/52
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