SILICON CARBIDE LMOSFET WITH GATE BREAK-DOWN PROTECTION,申请号KR1020017010588-传众专利搜索

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发明名称	SILICON CARBIDE LMOSFET WITH GATE BREAK-DOWN PROTECTION
摘要
申请公布号	KR20010102278(A)	申请公布日期	2001.11.15
申请号	KR1020017010588	申请日期	2001.08.20
申请人		发明人
分类号	H01L21/335	主分类号	H01L21/335
代理机构		代理人
主权项
地址

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