发明名称 Method for forming a spacer for semiconductor manufacture
摘要 This invention teaches methods and apparatus for forming self-aligned photosensitive material spacers about protruding structures in semiconductor devices. One embodiment of the invention is a method for forming a LDD structure, utilizing disposable photosensitive material spacers. A second embodiment of the invention comprises a method for forming a transistor, having salicided source/drain regions, utilizing photosensitive polyimide spacers for forming the salicided source/drain regions, without disposing of the spacers. A third embodiment of the invention comprises a method for creating an offset from a protruding structure on a semiconductor substrate, using disposable photosensitive material spacers.
申请公布号 US2001041409(A1) 申请公布日期 2001.11.15
申请号 US20010817728 申请日期 2001.03.26
申请人 MICRON TECHNOLOGY, INC. 发明人 JENG NANSENG;PIERRAT CHRISTOPHE
分类号 H01L21/033;H01L21/336;(IPC1-7):H01L21/336 主分类号 H01L21/033
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