发明名称 |
Process of forming a thick oxide field effect transistor |
摘要 |
A SOI field effect transistor structure providing ESD protection. The structure has a source, a drain, a body, and a gate. The gate is formed from a thick oxide layer and a metal contact. The gate is formed during the BEOL process. The transistor may be a p-type transistor or an n-type transistor. The transistor may have its drain tied to either the gate, the body, or both the gate and body. When used as a protection device, the drain is tied to a signal pad and the source is tied to a potential reference.
|
申请公布号 |
US2001041393(A1) |
申请公布日期 |
2001.11.15 |
申请号 |
US20010903820 |
申请日期 |
2001.07.12 |
申请人 |
HARGROVE MICHAEL J.;PELELLA MARIO M.;VOLDMAN STEVEN H. |
发明人 |
HARGROVE MICHAEL J.;PELELLA MARIO M.;VOLDMAN STEVEN H. |
分类号 |
H01L21/8238;H01L21/336;H01L21/822;H01L23/52;H01L23/58;H01L27/02;H01L27/04;H01L27/092;H01L27/12;H01L29/49;H01L29/78;H01L29/786;(IPC1-7):H01L21/00;H01L31/039;H01L21/20;H01L21/36;H01L21/425;C30B1/00;H01L21/84;H01L27/01 |
主分类号 |
H01L21/8238 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|