发明名称 LOW DRIVE VOLTAGE LiNbO<base:Sub xmlns:base=http://www.sipo.gov.cn/XMLSchema/base>3</base:Sub> INTENSITY MODULATOR WITH REDUCED ELECTRODE LOSS
摘要 <p>This device is a broadband, electro-optic modulator comprising an exemplary coplanar waveguide (CPW) electrode structure on an exemplary Mach-Zehnder interferometer. The modulator is formed on a lithium niobate (LiNbO&lt;Sub&gt;3&lt;/Sub&gt;) substrate that is etched so as to form ridges upon which a gold center electrode and two gold grounded waveguides are deposited upon a buffer layer of silicon dioxide (SiO&lt;Sub&gt;2&lt;/Sub&gt;) to form a coplanar waveguide electrode structure having a waveguide mode for receiving an electrical signal propagating therethrough in a first direction with a second phase velocity to phase modulate an optical light in the optical waveguide at a frequency in the range from 0 Hz to substantially 40 GHz. The ridges formed by the etching of the substrate acts to lower the effective dielectric constant of the structure, and as the spacing between electrodes is increased, the overlap integral gets larger as the electrical field becomes more vertical, and better confined, and the intrinsic electrical loss coefficient is reduced and the electrical losses through the device become smaller requiring less voltage to modulate the optical signal.</p>
申请公布号 WO2001086824(A3) 申请公布日期 2001.11.15
申请号 US2001/011731 申请日期 2001.04.27
申请人 发明人
分类号 G02F1/035 主分类号 G02F1/035
代理机构 代理人
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