| 发明名称 |
METHOD FOR SOLDERING A FIRST METAL LAYER, WHICH HAS A THICKNESS OF LESS THAN 5 DOLLAR G(M)M, TO A SECOND METAL LAYER, AND A CORRESPONDING SOLDERING DEVICE AND SEMICONDUCTOR CHIP ASSEMBLY DEVICE |
| 摘要 |
According to the invention, the first metal layer (107) is soldered to the second metal layer (102) using a soldering material (104), whereby only a portion of the first metal layer (107) is transformed into one or more intermetallic phases (122) with the soldering material that is used. |
| 申请公布号 |
WO0186715(A2) |
申请公布日期 |
2001.11.15 |
| 申请号 |
WO2001DE01651 |
申请日期 |
2001.05.03 |
| 申请人 |
INFINEON TECHNOLOGIES AG;HOUDEAU, DETLEF;HUEBNER, HOLGER;KRIPESH, VAIDYANATHAN |
发明人 |
HOUDEAU, DETLEF;HUEBNER, HOLGER;KRIPESH, VAIDYANATHAN |
| 分类号 |
H01L21/00;H01L21/60 |
主分类号 |
H01L21/00 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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