| 摘要 |
There are provided a GaN field effect transistor (FET) exhibiting an excellent breakdown voltage owing to the high quality of GaN crystal in a region where the electric lines of force concentrate during operation of the same, and a method of manufacturing the same. The FET has a layer structure formed of a plurality of GaN epitaxial layers. A gate electrode and a source electrode are disposed on the surface of the layer structure, and a drain electrode is disposed on the reverse surface of the same. A region of the layer structure in which the electric lines of force concentrate during operation of the FET has a reduced dislocation density compared with the other regions in the layer structure. The GaN FET is manufactured by forming, on a crystal-growing substrate having a surface formed with a plane pattern of a material other than a GaN-based material in an identical design to a plane pattern of an electrode determining the region in which the electric lines of force concentrate, a plurality of GaN epitaxial layers, one upon another, by using the epitaxial lateral overgrowth technique, thereby forming a layer structure, and then forming operational electrodes on the surface of the layer structure.
|
