发明名称 Photolithography system and a method for fabricating a thin film transistor array substrate using the same
摘要 A method of fabricating a thin film transistor array substrate for a liquid crystal display includes the step of forming a gate line assembly with gate lines, gate electrodes and gate pads. After laying a plurality of layers on the substrate, a photoresist film is deposited onto the layers. The photoresist film is first exposed to light at a first light exposing unit, and secondly exposed to light at a second light exposing unit such that the photoresist film has three portions of different thickness. The photoresist pattern, and some of the underlying layers are etched to form a data line assembly, a semiconductor pattern, and an ohmic contact pattern. The data line assembly includes data lines, source and drain electrodes, and data pads. The remaining photoresist film is removed, and a protective layer is formed on the substrate. The protective layer is etched together with the gate insulating layer to form first to third contact holes exposing the drain electrode, the gate pad and the data pad, respectively. Pixel electrodes, subsidiary gate and data pads are then formed.
申请公布号 US2001041394(A1) 申请公布日期 2001.11.15
申请号 US20010804056 申请日期 2001.03.13
申请人 PARK WOON-YONG;YOON JONG-SOO 发明人 PARK WOON-YONG;YOON JONG-SOO
分类号 G02F1/1368;G02F1/136;G02F1/1362;G03F7/20;H01L21/027;H01L21/302;H01L21/3065;H01L21/336;H01L27/12;H01L29/786;(IPC1-7):H01L21/84 主分类号 G02F1/1368
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