| 摘要 |
A ferroelectric memory device capable of high-speed drive having a word line to which a plurality of memory cells is connected, wherein the plurality of memory cells is divided into at least two memory cell groups, the memory cells configuring one memory cell group are connected to a common plate line, the plate line is activated or deactivated by a plate driver provided for each memory cell group, each of those plate drivers is connected to a word line, and at least one of those plate drivers is provided between memory cell groups that are provided adjacent to each other.
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