| 摘要 |
A high frequency bipolar switching transistor circuit. A first bipolar transistor is provided, having an emitter adapted to receive a voltage, having a base adapted to receive a drive current, and having a collector. A second bipolar transistor is provided, having a base connected to the collector of the first bipolar transistor, having a collector connected to the base of the first bipolar transistor, and having an emitter. An inductor having a first port connected to the common connection node of the collector of the first bipolar transistor and the base of the second transistor, and having a second port connected to the emitter of the second transistor. The common connection node of the emitter of the second transistor and the second port of the inductor form the output of the circuit.
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