发明名称 Semiconductor element and process for computer memories and logic circuits treats copper lines with tin or magnesium to reduce electromigration
摘要 A semiconductor element comprises a metal line (10) treated with endowing material (9) which is then driven in to reduce electromigration during operation. An Independent claim is also included for a method of forming the element above.
申请公布号 DE10021735(A1) 申请公布日期 2001.11.15
申请号 DE2000121735 申请日期 2000.05.04
申请人 INFINEON TECHNOLOGIES AG 发明人 SEIDEL, UWE;LOW, KIA SENG
分类号 H01L21/768;H01L23/532;(IPC1-7):H01L23/532;H01L21/28 主分类号 H01L21/768
代理机构 代理人
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