发明名称 |
Semiconductor element and process for computer memories and logic circuits treats copper lines with tin or magnesium to reduce electromigration |
摘要 |
A semiconductor element comprises a metal line (10) treated with endowing material (9) which is then driven in to reduce electromigration during operation. An Independent claim is also included for a method of forming the element above. |
申请公布号 |
DE10021735(A1) |
申请公布日期 |
2001.11.15 |
申请号 |
DE2000121735 |
申请日期 |
2000.05.04 |
申请人 |
INFINEON TECHNOLOGIES AG |
发明人 |
SEIDEL, UWE;LOW, KIA SENG |
分类号 |
H01L21/768;H01L23/532;(IPC1-7):H01L23/532;H01L21/28 |
主分类号 |
H01L21/768 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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