| 发明名称 |
SPIN-ON-GLASS COMPOSITION AND METHOD FOR MANUFACTURING SILICON OXIDE LAYER OF SEMICONDUCTOR DEVICE USING THE SAME |
| 摘要 |
<p>A spin-on glass (SOG) composition and a method of forming a silicon oxide layer utilizing the SOG composition are disclosed. The method includes coating on a semiconductor substrate having a surface discontinuity, an SOG composition containing perhydropolysilazane having a compound of the formula -(SiH<SUB>2</SUB>NH)<SUB>n</SUB>- wherein n represents a positive integer, a weight average molecular weight within the range of about 4,000 to 8,000, and a molecular weight dispersion within the range of about 3.0 to 4.0, to form a planar SOG layer. The SOG layer is converted to a silicon oxide layer with a planar surface by curing the SOG layer. Also disclosed is a semiconductor device made by the method.</p> |
| 申请公布号 |
KR20010100749(A) |
申请公布日期 |
2001.11.14 |
| 申请号 |
KR20000059635 |
申请日期 |
2000.10.11 |
| 申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
CHOI, JEONG SIK;JUN, SANG MUN;KANG, DAE WON;KIM, HONG GI;LEE, DONG JUN;LEE, JEONG HO |
| 分类号 |
H01L21/768;C08G77/62;C09D183/00;C09D183/16;C23C18/12;H01L21/3105;H01L21/312;H01L21/314;H01L21/316;H01L21/762;H01L21/8234;H01L21/8242;H01L23/522;H01L27/088;H01L27/108;(IPC1-7):H01L21/316 |
主分类号 |
H01L21/768 |
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