发明名称 Low inductance multilayer chip and method for fabricating same
摘要 <p>The invention relates to a low inductance multilayer chip and a method for fabricating the same, the multilayer chip including a plurality of internal electrode layers where the internal electrodes of the predetermined layers are electrically connected to reverse the current directions flowing in the internal electrodes of neighboring layers to thereby offset inductance and performing stable operations at high frequency.</p>
申请公布号 EP1154482(A2) 申请公布日期 2001.11.14
申请号 EP20010401158 申请日期 2001.05.04
申请人 INNOCHIPS TECHNOLOGY 发明人 PARK, IN-KIL;KIM, DUK-HEE
分类号 H01C7/04;H01L23/64;H01C1/148;H01C7/10;H01C7/18;H01C17/00;H01G4/232;H01G4/30;H01G4/40;H01L23/48;H01L23/498;(IPC1-7):H01L23/498;H01L21/48 主分类号 H01C7/04
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