| 摘要 |
A method of fabricating a semiconductor device having a substrate includes the steps of simultaneously forming an A copolymer having a columnar shape, a B copolymer surrounding the A copolymer, and a C copolymer surrounding the B copolymer on the substrate, removing the A copolymer to form a first hole on the substrate, forming the semiconductor device in the first hole; removing the B copolymer to form a second hole, forming an electrode on the semiconductor device for controlling an electric potential, and removing the C copolymer from the substrate. |
