Method of isolating vertical shorts in an electronic array

摘要

A process for repairing an electronic array wafer assembly having a short circuit between two non-insulative layers (116,113a,113b) separated by a dielectric layer (114) includes the step of selectively ablating one of the non-insulative layers so as to electrically isolate the situs of the short circuit while maintaining the electrical integrity of the underlying non-insulative layer intact. A laser beam is directed onto the non-insulative layer and scanned in a selected pattern to isolate the situs of the short circuit; the laser is further controlled such that a selected energy density is delivered to the surface to be ablated such that the underlying non-insulative layer (113a,113b) is not damaged.