METHOD AND APPARATUS FOR PLASMA PROCESSING

摘要

A temperature-adjusting means is buried in an upper portion of a ring member which surrounds a stage for a semiconductor wafer and has the same height as the stage. The temperature-adjusting means is controlled by the ring-member temperature controller 61, according to a recipe for setting a process condition, in such a manner that temperatures of a surface of the wafer and of an upper surface of the ring member are even, respectively. At that time, a temperature difference between above the wafer and above the upper surface of the ring member is made small, which enables to form a film having a higher uniformity. <IMAGE>