发明名称 TUNGSTEN DOPED CRUCIBLE AND METHOD FOR PREPARING SAME
摘要 <p>A process for preparing a quartz crucible having a tungsten doped layer on the inside surface, outside surface, or both the inside surface and the outside surface is disclosed. One or more surfaces of the crucible is exposed to a vaporous tungsten source to anneal the tungsten into the crucible surface and create a tungsten doped layer which behaves similarly to a bubble free layer upon use in a crystal pulling process.</p>
申请公布号 EP1153161(A1) 申请公布日期 2001.11.14
申请号 EP20000902380 申请日期 2000.01.11
申请人 MEMC ELECTRONIC MATERIALS, INC. 发明人 PHILLIPS, RICHARD, J.;KELTNER, STEVEN, J.
分类号 C03B8/00;C03B20/00;C03C3/06;C03C21/00;C23C14/14;C23C14/58;C30B15/10;C30B29/06;(IPC1-7):C30B15/10 主分类号 C03B8/00
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