发明名称 |
TUNGSTEN DOPED CRUCIBLE AND METHOD FOR PREPARING SAME |
摘要 |
<p>A process for preparing a quartz crucible having a tungsten doped layer on the inside surface, outside surface, or both the inside surface and the outside surface is disclosed. One or more surfaces of the crucible is exposed to a vaporous tungsten source to anneal the tungsten into the crucible surface and create a tungsten doped layer which behaves similarly to a bubble free layer upon use in a crystal pulling process.</p> |
申请公布号 |
EP1153161(A1) |
申请公布日期 |
2001.11.14 |
申请号 |
EP20000902380 |
申请日期 |
2000.01.11 |
申请人 |
MEMC ELECTRONIC MATERIALS, INC. |
发明人 |
PHILLIPS, RICHARD, J.;KELTNER, STEVEN, J. |
分类号 |
C03B8/00;C03B20/00;C03C3/06;C03C21/00;C23C14/14;C23C14/58;C30B15/10;C30B29/06;(IPC1-7):C30B15/10 |
主分类号 |
C03B8/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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