METHOD OF TRANSFERRING THIN FILM DEVICES, THIN FILM DEVICE, THIN FILM INTEGRATED CIRCUIT DEVICE, ACTIVE MATRIX SUBSTRATE, LIQUID CRYSTAL DISPLAY, AND ELECTRONIC APPARATUS

摘要

A thin film device fabrication method in which a thin film device formed on a substrate are transferred to a primary destination-of-transfer part and then the thin film device is transferred to a secondary destination-of-transfer part. A first separation layer (120) made of such a material as amorphous silicon is provided on a substrate (100) which allows passage of laser. A thin film device (140) such as TFTs are formed on the substrate (100). Further, a second separation layer (160) such as a hot-melt adhesive layer is formed on the thin film devices(140), and a primary destination-of-transfer part (180) is mounted thereon. The bonding strength of the first separation layer is weakened by irradiation with light, and the substrate (100) is removed. Thus, the thin film device (140) is transferred to the primary destination-of-transfer part. Then, a secondary destination-of-transfer part (200) is attached onto the bottom of an exposed part of the thin film device (140) via an adhesive layer (190). Thereafter, the bonding strength of the second separation layer is weakened by such means as thermal fusion, and the primary destination-of-transfer part is removed. In this manner, the thin film device (140) can be transferred to the secondary destination-of-transfer part (200) while maintaining layering relationship with respect to the substrate (100).