发明名称 SEMICONDUCTOR CHIP WITH BUMP CONTACTS
摘要 A via 42 is formed by copper plating on a surface of an aluminum electrode pad 32 of a semiconductor chip 30. Since the via 42 having flexibility absorbs a stress generated due to a difference in thermal expansion between the semiconductor chip 30 and a substrate, the semiconductor chip 30 can be mounted onto the substrate 50 with high reliability and connection reliability of the semiconductor chip 30 can be enhanced. <IMAGE>
申请公布号 EP1154471(A1) 申请公布日期 2001.11.14
申请号 EP19990944862 申请日期 1999.09.27
申请人 IBIDEN CO., LTD. 发明人 ENOMOTO, R;YABASHI, H.;SUGIYAMA, TADASHI;HATADA, KENZO
分类号 H01L21/60;H01L21/288;H01L23/31;H01L23/485 主分类号 H01L21/60
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