Method to test auto-refresh and self refresh circuitry

摘要

This invention describes a method to test both auto-refresh and self refresh of an SDRAM. The method writes a logical zero in to a single cell on each word line using a write with auto-precharge and increments an internal counter with either auto-refresh or self refresh to select the row address. The test is performed using existing circuitry on the SDRAM, and when testing self refresh, the refresh cycle is exited shortly after a cell on a row has been written into so as to not run the entire refresh cycle and save test time. A test signature is formed by the logical zeros written into one cell along each word line. Comparing this signature with the signature that should exist provides an easy way to determine if there is a test error and where the error occurred.