发明名称 |
Tuning substrate/resist contrast to maximize defect inspection sensitivity for ultra-thin resist in DUV lithography |
摘要 |
There is provided a method for enhancing the contrast between oxide film and ultra-thin resists in deep-ultraviolet lithography for use with a wafer defect inspection system in order to maximize defect inspection sensitivity. This is achieved by varying the thickness of the oxide film for a given ultra-thin resist thickness so as to produce a high contrast. As a result, defect inspection of the ultra-thin resist pattern is easily obtained. In a second embodiment, the ultra-thin resist thickness is varied for a given oxide film thickness. In a third embodiment, both the oxide film and the ultra-thin resist thicknesses are varied simultaneously so as to obtain an optimum contrast.
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申请公布号 |
US6316277(B1) |
申请公布日期 |
2001.11.13 |
申请号 |
US20000580612 |
申请日期 |
2000.05.30 |
申请人 |
ADVANCED MICRO DEVICES, INC. |
发明人 |
PHAN KHOI A.;LYONS CHRISTOPHER F.;NGUYEN KHANH B.;SCHEFSKE JEFF |
分类号 |
H01L21/66;(IPC1-7):H01L21/66 |
主分类号 |
H01L21/66 |
代理机构 |
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地址 |
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