发明名称 OPC method to improve e-beam writing time
摘要 Jogs are sometimes needed in lines that are used as wires in integrated circuits. In the prior art, these jogs are introduced by inserting a diagonal segment at the desired location. This type of shape is expensive to generate when electron beam writing is used. In the present invention the problem is solved by forming the jog through a simple lateral sliding of two halves of the line relative to one another. The resulting line pattern has both sharp corners and a central constriction but when it is transferred to photoresist, using standard photolithographic techniques, both the sharp corners and the constriction are no longer present, provided no OPC was applied to that section of the line. The motivation for this is the much lower cost of E-beam drawing for the structure of the present invention relative to structures of the prior art.
申请公布号 US6316152(B1) 申请公布日期 2001.11.13
申请号 US20000483036 申请日期 2000.01.18
申请人 TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY 发明人 HSIEH HONG-CHANG;KUO HUNG-JUI;YU SHINN-SHENG
分类号 G03F1/14;G03F7/20;H01J37/317;(IPC1-7):G03F9/00;G03C5/00 主分类号 G03F1/14
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