发明名称 |
COLD CATHODE ELECTRON EMISSION DEVICE |
摘要 |
PURPOSE: A cold cathode electron emission device is provided to emit instantly electrons without a preheating process by forming an inversion layer using an electric field. CONSTITUTION: A p+ type cathode(52) is formed on a center portion of an upper portion of a p-type substrate(51) in order to emit electrons. An n+ contact region(53) is formed around the p+ type cathode(52). An insulating layer(54) is formed on the p-type substrate(51) and the n+ contact region(53). A gate metal layer(55) is formed on an upper portion of the insulating layer(54). An anode(60) is formed on an upper portion of the gate metal layer(55). An inversion layer as a shallow channel is formed on an upper portion of the p+ type cathode(52) by an electric potential difference between the gate metal layer(55) and the n+ contact region(53) and a total electric potential difference between the gate metal layer(55) and the p-type substrate(51).
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申请公布号 |
KR100315769(B1) |
申请公布日期 |
2001.11.13 |
申请号 |
KR19980004047 |
申请日期 |
1998.02.11 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
CHOI, BYOUNG LYONG;LEE, JEONG YONG |
分类号 |
H01J1/30;(IPC1-7):H01J1/30 |
主分类号 |
H01J1/30 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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