发明名称 |
Photolithographic process for preventing corner rounding |
摘要 |
A photolithographic process for preventing the rounding of the corners of a pattern. A silicon wafer is provided. A first photoresist layer is formed over the silicon wafer and then patterned to form a first group of mutually parallel photoresist lines along a first direction. A second photoresist layer is formed over the silicon wafer and then patterned to form a second group of mutually parallel photoresist lines along a second direction. The first direction and the second direction are on the same plane but mutually perpendicular.
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申请公布号 |
US6316340(B1) |
申请公布日期 |
2001.11.13 |
申请号 |
US20000721148 |
申请日期 |
2000.11.22 |
申请人 |
UNITED MICROELECTRONICS CORP. |
发明人 |
HWANG JIUNN-REN;HUANG I-HSIUNG |
分类号 |
G03F7/00;H01L21/027;(IPC1-7):H01L21/425 |
主分类号 |
G03F7/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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