发明名称 Method of manufacturing semiconductor devices separated from a wafer
摘要 A semiconductor device with an improved speed response has a linear ridge pattern including an active layer, a cladding layer, a current blocking layer, and a contact layer on a semiconductor substrate. The insulating layer may be formed in a pattern having a high resistance to dry etching along a longitudinal side of the ridge pattern.
申请公布号 US6316280(B1) 申请公布日期 2001.11.13
申请号 US19990271257 申请日期 1999.03.17
申请人 MITSUBISHI DENKI KABUSHIKI KAISHA 发明人 FUJIWARA MASATOSHI
分类号 H01S5/02;(IPC1-7):H01L21/00 主分类号 H01S5/02
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