| 发明名称 |
Nitride-compound semiconductor device |
| 摘要 |
A GaAlInBN systems semiconductor device is spaced apart from a substrate by a layer for reducing the propagation of a dislocation. This layer has a protrusion or protrusions, each having sidewalls on which a single crystal is exposed.
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| 申请公布号 |
US6316785(B1) |
申请公布日期 |
2001.11.13 |
| 申请号 |
US19990418025 |
申请日期 |
1999.10.14 |
| 申请人 |
KABUSHIKI KAISHA TOSHIBA |
发明人 |
NUNOUE SHINYA;YAMAMOTO MASAHIRO |
| 分类号 |
H01L21/205;H01L33/06;H01L33/12;H01L33/16;H01L33/32;H01S5/00;H01S5/02;H01S5/323;H01S5/343;(IPC1-7):H01L33/00 |
主分类号 |
H01L21/205 |
| 代理机构 |
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代理人 |
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