| 摘要 |
PROBLEM TO BE SOLVED: To improve a process including pre- and after-stages of a vacuum treating stage from the comprehensive point of view, and to improve the vacuum treating characteristics, product qualities and the yield of good products. SOLUTION: This device has at least a pressure reducible reaction vessel 101 to hold a substrate 110, a film forming high-frequency power source 107 for supplying a first high-frequency power, a heating high-frequency power source 117 for supplying a second high-frequency power with the frequency lower than that of the first high-frequency power and a gas feed pipe 112 for supplying a non deposite gas and a specified raw gas. The plasma resulting from the second high-frequency power is produced in non-deposit gas supplied into the reaction vessel 101 to heat an article to be treated, and the plasma due to the first high-frequency power is produced in the specified raw gas supplied into the reaction vessel 101 to vacuum-treat the article. |
