Method of forming micro pattern of semiconductor device

摘要

Provided with a method of forming a micro pattern of semiconductor devices including the steps of: forming a hard mask layer on a layer to be etched; depositing and patterning a photoresist on the hard mask layer to form a photoresist pattern having a first line width; etching the photoresist pattern and the hard mask layer at once to form a hard mask layer pattern having a second line width smaller than the first line width; and selectively removing the layer to be etched by using the hard mask layer pattern as a mask to form the micro pattern.