发明名称 |
Method of manufacturing a flash memory device |
摘要 |
There is disclosed a method of manufacturing a flash memory device. In order to solve the problems that a well resistance and a parasitic capacitance are great and the erase speed of a device is slow in case of the conventional flash memory device, the present invention forms a well region of a sector unit by use of a metal silicide layer and defines an unit cell by use of a ploysilicon layer. Thus, it can reduce the well resistance and the parasitic capacitance. Also, it can improve the operating speed of the device and can reduce the manufacturing cost by allowing the erase operation of a cell unit.
|
申请公布号 |
US6316313(B1) |
申请公布日期 |
2001.11.13 |
申请号 |
US20000717002 |
申请日期 |
2000.11.22 |
申请人 |
HYUNDAI ELECTRONICS INDUSTRIES CO., LTD. |
发明人 |
PARK SUNG KEE;KIM KI SEOG;CHANG SANG HOAN;LEE KEUN WOO |
分类号 |
H01L21/8247;H01L21/8246;H01L27/115;H01L29/788;H01L29/792;(IPC1-7):H01L21/824 |
主分类号 |
H01L21/8247 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|