发明名称 MANUFACTURING METHOD AND MANUFACTURING DEVICE FOR SILICON SINGLE CRYSTAL
摘要 PROBLEM TO BE SOLVED: To provide a manufacturing method and a manufacturing device for a silicon single crystal which can manufacture perfectly no defective silicon single crystal while controlling growth of crystal diameter. SOLUTION: The manufacturing method of silicon single crystal comprises operation of pull up speed control value, limitation of the pull up speed control value with pull up speed span, operation of heater temperature by comparing operated pull up speed control value before pull up speed span limitation with set pull up speed to obtain heater temperature setting out put. By this way, the diameter of the silicon single crystal is controlled. The manufacturing device for the silicon single crystal which is composed of the diameter detecting means, a pull up speed operating means, a pull up speed span limiting means and a temperature correction operation means. The temperature correction operating means operates the temperature correction value of the heater by comparing the pull up speed control value before the span limitation with the set pull up speed.
申请公布号 JP2001316199(A) 申请公布日期 2001.11.13
申请号 JP20000130150 申请日期 2000.04.28
申请人 SHIN ETSU HANDOTAI CO LTD 发明人 MAEDA AKIO;SOEDA SATOSHI;OOTSUNA HIROSHI;MITAMURA NOBUAKI;TAKEYASU YUKINOBU
分类号 C30B29/06;C30B15/22;H01L21/208;(IPC1-7):C30B29/06 主分类号 C30B29/06
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