发明名称 Semiconductor memory device having a test mode and semiconductor testing method utilizing the same
摘要 In a DRAM, a first selector selects one bit of data out of four bits of data read from a memory portion, and provides the data to a data output buffer. Data output buffer is controlled by an output enable signal generated from a determination signal and the like, provides to a data input/output terminal the data from first selector when the four bits of data all match, and causes the data input/output terminal to enter the high impedance state when no match occurs. Since a second selector for selecting either one of read data and determination signal is no longer required, the delay of read data caused by the second selector can be eliminated so that a higher access speed can be achieved.
申请公布号 US6317373(B1) 申请公布日期 2001.11.13
申请号 US20000614610 申请日期 2000.07.12
申请人 MITSUBISHI DENKI KABUSHIKI KAISHA 发明人 TANIMURA MASAAKI
分类号 G11C11/401;G01R31/28;G01R31/3185;G11C29/14;G11C29/26;G11C29/34;(IPC1-7):G11C7/00 主分类号 G11C11/401
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